• Українська
  • English

< | >

Current issue   Ukr. J. Phys. 2017, Vol. 62, N 4, p.335-342


Boichuk V.I., Bilynskyi I.V., Pazyuk R.I.

Department of Theoretical and Applied Physics and Computer Simulation,
Ivan Franko State Pedagogical University of Drohobych
(3, Stryiska Str., Drohobych 82100, Ukraine; e-mail: ri.pazyuk@gmail.com)

Miniband Electrical Conductivity in Superlattices of Spherical InAs/GaAs Quantum Dots

Section: Nanosystems
Original Author's Text: Ukrainian

Abstract: The electrical properties of nanoscale semiconductor InAs/GaAs heterosystems with 2Dsuperlattices of spherical quantum dots have been studied. The dependences of the electron group velocity on the wave vector and the miniband quantum number are obtained. The dependences of the Fermi level of electrons in minibands on the concentration of donor impurities, donor energy, and temperature are found. The temperature dependences of the majority carrier concentration and the electrical conductivity are analyzed for various donor concentrations and energies.

Key words: quantum dot, superlattice, electron states, miniband, electrical conductivity