• Українська
  • English

< | >

Current issue   Ukr. J. Phys. 2017, Vol. 62, N 3, p.208-213
https://doi.org/10.15407/ujpe62.03.0208    Paper

Hladkovskiy V.V., Fedorovich O.A.

Institute for Nuclear Research, Nat. Acad. of Sci. of Ukraine
(47, Nauky Ave., Kyiv 03028, Ukraine; e-mail: v.glad2010@yandex.ua)

Spectroscopic Studies of RF Discharge Plasma at Plasma-Chemical Etching of Gallium Nitride Epitaxial Structures

Section: Plasmas and Gases
Original Author's Text: Ukrainian

Abstract:  The results of experimental researched dealing with the bias voltage influence on the evolution of spectra emitted by plasma at the etching of gallium nitride in a plasma-chemical reactor with the controlled magnetic field are reported. At high bias voltage values above –250 V, there appear lines in the plasma emission spectra which belong to the excited atoms of the material of a working electrode. Under the influence of a negative potential, the active electrode is sputtered, and metal ions are redeposited onto its surface, which results in the lower etching rate.

Key words: bias voltage, plasma-chemical etching, sputtering, plasma-chemical reactor, radio-frequency discharge, optical spectroscopy.


  1. T. Harafuji, J. Kawamura. Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal. Appl. Phys. 96, 2501 (2004).
  2. A.E. Belyaev, N.I. Klyui, R.V. Konakova et al. Electroreflectance study of the effect of radiation on the optical properties of epitaxial GaN films. Fiz. Tekh. Poluprovodn. 46/3, 317 (2012) (in Russian).
  3. D.C. Look, D.C. Reynolds, J.W. Hemsky, J.R. Sizelove et al. Defect donor and acceptor in GaN. Phys. Rev. Lett. 79, 2273 (1997).
  4. A.G. Borisenko, B.P. Polozov, O.A. Fedorovich et al. Plasmochemical etching of epitaxial nitride gallium structures. Tekhnol. Konstr. Elektron. Apparat. ´ No. 6, 42 (2005) (in Russian).
  5. R.A. Gottscho, G. Smolinsky, R.H. Burton. Carbon tetrachloride plasma etching of GaAs and InP: A kinetic study utilizing nonperturbative optical techniques. J. Appl. Phys. 53, 5908 (1982).
  6. H.J. Tiller, R. G¨obel, S. Ustinowa, T. Kloss. Mass spectroscopic product analysis. An investigation of CCl4 plasma. Influence of plasma conditions and gas admixture on the decomposition products. Int. J. Mass Spectr. Ion Proc. 59, 143 (1984).
  7. O. Jasek, J. Janca, M. Klima. Synthesis of fullerenes by radiofrequency plasma discharges. In Proceedings of 14th International Symposium on Plasma Chemistry (Praha, 1999), p. 2223 [ISBN: 80-902724-3-6].
  8. P.E. Clarke, D. Field, D.F. Klemperer. Optical spectroscopic study of mechanisms in CCl4 plasma etching of Si. Appl. Phys. 67, 1525 (1990).
  9. V. Sharma. Momentum spectroscopic studies of atomic and molecular ionization. Ph.D. thesis (Mohanlal Sukhandia University, 2007).
  10. E.G. Kostin, V.V. Ustalov, O.A. Fedorovich. Massspectrometry research of chemically active plasma in highfrequency discharge in controlled magnetic fields. Zbirn. Nauk Prats Inst. Yadern. Dosl. 2, No. 13, 86 (2004) (in Ukrainian).
  11. O.A. Fedorovich, M.P. Kruglenko, B.P. Polozov. Peculiarity of plasma-chemical etching of silicon plate edges of photoelectric converters. Tekhnol. Konstr. Elektron. Apparat. ´ No. 6, 46 (2009) (in Russian).
  12. V.V. Hladkovskiy, O.A. Fedorovich, B.P. Polozov, M.P. Kruglenko. About peculiarities of self - bias voltage formation in plasma-chemical reactors with controlled magnetic fields. Probl. At. Sci. Technol. 1 (95), 156 (2015).
  13. O.A. Feorovich, V.V. Hladkovskiy, B.P. Polozov, M.P. Kruglenko. The bias voltage and its influence on the etching rate of silicon. Probl. At. Sci. Technol. 6 (100), 146 (2015).
  14. A.N. Zaidel, Tables of Spectral Lines (Fizmatgiz, 1962) (in Russian).
  15. A.R. Striganov, G.A. Odintsova, Tables of the Spectral Lines of Atoms and Ions (Energoizdat, 1982) (in Russian). ´
  16. R.W.B. Pearse, A.G. Gaydon. The Identification of Molecular Spectra (Chapman and Hall, 1976) [ISBN: 041214350X].
  17. A.N. Zaidel, N.I. Kaliteevskii, L.V. Lipis, M.P. Chaika. Emission Spectrum Analysis of Atomic Materials (U.S. Atomic Energy Commission, 1963).
  18. V.V. Hladkovskiy, B.P. Polozov, O.A. Fedorovich. Influence of bias voltage on the etching rate of silicon and formation of surface relief. In Proceedings of the 16th International Scientific and Practical Conference on Modern Information and Electronic Technologies (Odessa, 2015), p. 236 (in Russian).