0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Olenych I.B., Monastyrskyi L.S., Koman B.P.
Ivan Franko National University of L’viv
(50, Dragomanov Str., Lviv 79005, Ukraine; e-mail: email@example.com)
Electrical Properties of Silicon-Oxide Heterostructures on the Basis of Porous Silicon
Original Author's Text: Ukrainian
Abstract: The processes of charge-carrier transport and relaxation in silicon-oxide heterostructures based on porous silicon have been studied, by using voltammetric measurements and thermoactivation spectroscopy. The temperature dependences of the conductivity in experimental structures are measured in an interval of 80–325 K, and the activation energy of the electrical conductivity is determined. On the basis of the temperature dependences obtained for the depolarization current, the energy distribution of localized electron states, which affect the charge transport processes, is calculated. The influence of coating the porous silicon layer with a thin SiOx film on the electrical properties of the layer is analyzed. The obtained results extend the application scope of silicon-oxide nanosystems.
Key words: porous silicon, silicon-oxide film, current-voltage characteristic, conductivity activation energy, thermally stimulated depolarization.