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Current issue   Ukr. J. Phys. 2016, Vol. 61, N 7, p.606-612
http://dx.doi.org/10.15407/ujpe61.07.0606    Paper

Krymus A.S., Myronchuk G.L., Parasyuk O.V.

Lesya Ukrainka Eastern European National University
(13, Volya Ave., Lutsk 43025, Ukraine; e-mail: post@univer.lutsk.ua)

Influence of Cu-, Sn-, and In-Doping on Optical Properties of AgGaGe3 Se8 Single Crystals

Section: Solid Matter
Original Author's Text: Ukrainian

Abstract: The optical properties of AgGaGe3Se8 single crystals doped with Cu, In, and Sn atoms have been studied. A physical model is proposed for those compounds, which are wide-gap semiconductors (Eg ≈ 2.09–2.15 eV at T = 300 K) with the p-type conductivity, and whose optical parameters depend on the dopant nature and concentration. On the basis of this model and making allowance for specific features of disordered systems, the obtained experimental results are explained.

Key words: chalcogenide crystals, optical properties, Urbach energy.


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