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Current issue   Ukr. J. Phys. 2016, Vol. 61, N 7, p.588-596
http://dx.doi.org/10.15407/ujpe61.07.0588    Paper

Lysenko I.O.

Institute of Applied Physics, Nat. Acad. of Sci. of Ukraine
(58, Petropavlivs’ka Str., Sumy 40030, Ukraine; e-mail: lysenko.i@ipfcentr.sumy.ua)

Analysis of the Formation of Stationary Patterns at the Ion Sputtering within the Anisotropic Kuramoto–Sivashinsky Model

Section: Solid Matter
Original Author's Text: Ukrainian

Abstract: The processes of change of a surface morphology and formation of a stationary pattern at the ion sputtering are considered. A linear stability analysis was carried out, and the range of parameters, at which the patterning is possible, is determined. Assuming the existence of a stabilization parameter that involves the redistribution of knocked-out atoms, all evolution scenarios for the surface are obtained numerically. The dynamics of defects is numerically analyzed for every structure type, and the corresponding time dependences are plotted.

Key words: ion sputtering, pattern formation, stationary patterns, heavy ions, ion flux, defect, hexagonal structures, linear structures.

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