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Current issue   Ukr. J. Phys. 2016, Vol. 61, N 2, p.155-159
doi:10.15407/ujpe61.02.0155    Paper

Freik D.M.1, Mudryi S.I.2, Gorichok I.V.1, Prokopiv V.V.1, Matkivsky O.M.1, Arsenjuk I.O.1, Krynytsky О.S.1, Bojchyk V.M.1

1 Vasyl Stefanyk Precarpathian National University
(57, Shevchenko Str., Ivano-Frankivsk 76025, Ukraine; e-mail: fcss@pu.if.ua)
2 Ivan Franko National University of Lviv
(8, Kyrylo i Mefodii Str., Lviv 79005, Ukraine)

Thermoelectric Properties of Bismuth-Doped Tin Telluride SnTe:Bi

Section: Solid Matter
Original Author's Text: Ukrainian

Abstract: X-ray researches are carries out, and the thermoelectric coefficient α and the specific conductivity σ are measured for tin telluride specimens doped with bismuth to concentrations of 0–2.0 at.% Bi. Non-monotonic dependences of the unit cell parameter and the electrical parameters on the Bi impurity content are demonstrated. The introduction of bismuth to 1.0 at.% is found to favor an increase in the thermoelectric power α2σ in SnTe at temperatures T > 500 K as a result of the thermoelectric coefficient growth.

Key words: tin telluride, doping, thermoelectric properties.

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