• Українська
  • English

< | >

Current issue   Ukr. J. Phys. 2016, Vol. 61, N 2, p.155-159
doi:10.15407/ujpe61.02.0155    Paper

Freik D.M.1, Mudryi S.I.2, Gorichok I.V.1, Prokopiv V.V.1, Matkivsky O.M.1, Arsenjuk I.O.1, Krynytsky О.S.1, Bojchyk V.M.1

1 Vasyl Stefanyk Precarpathian National University
(57, Shevchenko Str., Ivano-Frankivsk 76025, Ukraine; e-mail: fcss@pu.if.ua)
2 Ivan Franko National University of Lviv
(8, Kyrylo i Mefodii Str., Lviv 79005, Ukraine)

Thermoelectric Properties of Bismuth-Doped Tin Telluride SnTe:Bi

Section: Solid Matter
Original Author's Text: Ukrainian

Abstract: X-ray researches are carries out, and the thermoelectric coefficient α and the specific conductivity σ are measured for tin telluride specimens doped with bismuth to concentrations of 0–2.0 at.% Bi. Non-monotonic dependences of the unit cell parameter and the electrical parameters on the Bi impurity content are demonstrated. The introduction of bismuth to 1.0 at.% is found to favor an increase in the thermoelectric power α2σ in SnTe at temperatures T > 500 K as a result of the thermoelectric coefficient growth.

Key words: tin telluride, doping, thermoelectric properties.

1. V.M. Shperun, D.M. Freik, and V.V. Prokopiv, Tin Telluride. Physico-Chemical Properties (Plai, Ivano-Frankivsk, 2002) (in Ukrainian).
2. V.P. Vedeneev, S.P. Krivoruchko, and E.P. Sabo, Fiz. Tekh. Poluprovodn. 3, 32 (1998).
3. Y.G. Sha and R.F. Brebrick, J. Electron. Mater. 3, 18 (1989).
4. U. Kattner, H.L. Lukas, and G. Petzow, J. Less-Common. Met. 1, 114 (1985).
5. D. Baltrunas, S. Motiejunas, and E. Rogacheva, Phys. Status Solidi A 97, K131 (1986).  CrossRef
6. E.I. Rogacheva, G.V. Gorns, S.A. Laptev et al., Neorg. Mater. 6, 24 (1988).
7. B. Boltaks, Diffusion and Point Defects in Semiconductors (Mir, Moscow, 1987).