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Current issue   Ukr. J. Phys. 2016, Vol. 61, N 2, p.143-149
doi:10.15407/ujpe61.02.0143    Paper

Neimash V.1, Dovbeshko G.1, Shepelyavyi P.2, Danko V.2, Melnyk V.3, Isaiev M.3, Kuzmich A.3

1 Institute of Physics, Nat. Acad. of Sci. of Ukraine
(46, Nauky Ave., Kyiv 03028, Ukraine; e-mail: neimash@gmail.com)
2 V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Nauky Ave, Kyiv 03028, Ukraine)
3 Taras Shevchenko National University of Kyiv, Faculty of Physics
(64/13, Volodymyrs’ka Str., Kyiv 01601, Ukraine)

Raman Scattering in the Process of Tin-Induced Crystallization of Amorphous Silicon

Section: Solid Matter
Original Author's Text: Ukrainian

Abstract: Metal-induced crystallization in Si–Sn–Si thin film structures has been studied, by using the Raman scattering at various light powers. The Raman spectra are used to monitor the temperature, size, and concentration of Si crystals formed in the amorphous Si matrix. A significant acceleration of the metal-induced crystallization in Si–Sn–Si structures at their laser-assisted annealing in comparison with their annealing in dark is revealed. A basic possibility of the “on line” monitoring of the size and the concentration of Si nanocrystals in the course of their formation is demonstrated.

Key words: solar cell, thin films, nanocrystals, silicon, tin, metal-induced crystallization.

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