0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Venger E.F.1, Melnichuk L.Yu.2, Melnichuk A.V.2, Semikina T.V.1
1 V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Nauky Ave., Kyiv 03028, Ukraine)
2 Mykola Gogol State University of Nizhyn
(2, Kropyv’yans’ka Str., Nizhyn 16600, Ukraine; e-mail: email@example.com)
IR Spectroscopic Study of Thin ZnO Films Grown Using the Atomic Layer Deposition Method
Section: Plasmas and Gases
Original Author's Text: Ukrainian
Abstract: Using the IR reflection method and the modified method of disturbed total internal reflection (DTIR), thin undoped conducting ZnO films grown with the use of the atomic layer deposition method have been studied theoretically and experimentally for the first time in a spectral interval of 400–1400 cm–1. The parameters of ZnO films determined from the IR reflection spectra testify to the presence of frequency “windows” in the DTIR spectra, in which surface phonon and plasmon-phonon polaritons are excited. The theoretical calculations are in good agreement with the experimental results. The dispersion dependences of high- and low-frequency branches of DTIR spectra are plotted and analyzed.
Key words: disturbed total internal reflection, undoped conducting ZnO films, surface plasmon-phonon polaritons.