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Current issue   Ukr. J. Phys. 2016, Vol. 61, N 11, p. 992-1007
http://dx.doi.org/10.15407/ujpe61.11.0992    Paper

Horichok I.V., Hurhula H.Ya., Prokopiv V.V., Pylyponiuk M.A.

Vasyl Stefanyk Precarpathian National University
(57, Shevchenko Str., Ivano-Frankivsk 76018, Ukraine; e-mail: horichokihor@gmail.com)

Semiempirical Energies of Vacancy Formation in Semiconductors

Section: Solid Matter
Original Author's Text: English

Abstract: Using the extended H¨uckel method and the methods based on thermochemical, thermodynamic, and electrophysical data, the energies of vacancy formation in AIIBVI, AIIIBV, and AIVBVI semiconductor crystals have been determined. A correlation of the obtained values with one another and with the literature experimental and ab initio theoretical data is established. This testifies to the adequacy of the applied methods and to a possibility of using them for the estimation of the defect concentration in semiconductors.

Key words:  semiconductors, point defects, defect formation energy.

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