0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Ferghana State University, Chair of Physics
(19, Murabbiylar Str., Ferghana 150100, Uzbekistan; e-mail: email@example.com)
Polarization-Dependent Photocurrent in p-GaAs
Section: Solid Matter
Original Author's Text: Ukrainian
Abstract: An expression for the spectral and temperature dependences of a photocurrent arising as a result of the linear photovoltaic effect in such semiconductors as gallium arsenide with the hole conduction has been derived. The photocurrent is shown to arise owing to the presence of terms with different parities in the effective hole Hamiltonian. Theoretical and experimental results have been compared.
Key words: photovoltaic effect, semiconductor, polarization, photocurrent, Hamiltonian, momentum operator, energy spectrum, light absorption coefficient.