0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Sachenko A.V., Kostylyov V.P., Vlasiuk V.M., Korkishko R.M., Sokolovs'kyi I.O., Chernenko V.V.
V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Prosp. Nauky, Kyiv 03680, Ukraine; e-mail: firstname.lastname@example.org)
Features in the Formation of a Recombination Current in the Space Charge Region of Silicon Solar Cells
Section: Solid Matter
Original Author's Text: Ukrainian
Abstract: Dark I–V curves of silicon solar cells with various Shockley–Reed–Hall lifetimes have been studied. The lifetimes are determined from the short-circuit-current internal quantum yield. The recombination currents in the space charge region (SCR) are found to be formed within time intervals that are at least an order of magnitude shorter than the charge-carrier bulk lifetime. This effect can be associated with a high defect concentration (and, therefore, a high deep-level concentration) in the SCR of examined Si structures. The parameters of deep centers that are responsible for the recombination in the SCR have been evaluated.
Key words: recombination current, space charge region, silicon solar cells, deep recombination level.