0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Kozynetz A.V., Skryshevskyi V.A.
Taras Shevchenko National University of Kyiv, Institute of High Technologies
(4g, Academician Glushkov Ave., Kyiv 03127, Ukraine; e-mail: email@example.com)
Theoretical Analysis of the Efficiency of Silicon Solar Cells with Amorphized Layers in the Space Charge Region
Section: Solid Matter
Abstract: A possibility to enhance the efficiency of silicon solar cells by creating an amorphized barrier structure in the space charge region has been demonstrated. The positive effect can be achieved owing to the absorption of infrared photons with energies lower than the silicon band gap and a reduction of the dark current. Optimal parameters of this structure (the barrier height and position in the space charge region) are determined in the framework of the diode theory approximation.
Key words: solar cell, n+-p silicon junction, efficiency, amorphized layer, infrared absorption.