0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Taras Shevchenko National University of Kyiv
(64/13, Volodymyrs’ka Str., Kyiv 01601, Ukraine; e-mail: Afanasieva@univ.kiev.ua)
Study of the Interaction of Atoms of the IV- and V-th Groups with Si(001) and Ge(001) Surfaces
Abstract: Adsorption and diffusion processes of atoms of the IV- (Si, Ge) and V-th (As, Sb, Bi) groups on the Si(001) and Ge(001) surfaces have been simulated, by using quantum chemistry techniques. The mechanism of how the adsorption of elements of the V-th group affects the Si(001) surface is considered. The literature concerning the adsorption of atoms of the V-th group (As, Sb, Bi) and their co-adsorption with oxygen on the Si(001) surface and the diffusion of Bi addimers on the Si(001) surface and Si and Ge ad-dimers on the Ge(001) one is analyzed. The results obtained demonstrate a high capability of quantum chemistry methods to provide the unique information about the interaction between adsorbates and the semiconductor surface.
Key words: adsorption, diffusion, semiconductor surface, oxidation.