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Ukr. J. Phys. 2015, Vol. 60, N 2, p.165-169
doi:10.15407/ujpe60.02.0165    Paper

Nakhodkin N.G., Rodionova T.V., Sutyagina A.S.

Taras Shevchenko National University of Kyiv
(4g, Academician Glushkov Prosp., Kyiv 03022, Ukraine)

Mechanisms of Surface Evolution during the Growth of Undoped Nanosilicon Films

Section: Nanosystems
Language: Ukrainian

Abstract: The thickness dependence of the surface roughness and the grain size of nanosilicon films, produced by low-pressure chemical vapour deposition, has been found, by using atomic force microscopy. A correlation between the surface roughness, grain size, and transformation of a film structure from the equiaxial structure into a fibrous one is established. Possible mechanisms of surface evolution are analyzed.

Key words: nanosilicon films, surface roughness, grain growth, mechanism of grain growth, atomic force microscopy.