0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Nakhodkin M.G., Fedorchenko M.I.
Taras Shevchenko National University of Kyiv
(64/13, Volodymyrs’ka Str., Kyiv 01601, Ukraine)
Interaction of Oxygen and Gadolinium with Si(100)-2x1 Surface. Formation of a System with 1-eV Work Function
Section: Solid matter
Abstract: Changes in the electronic properties of the Si(100) surface, when a multilayer structure of oxidized Gd atoms is created on it, have been studied, by using the electron spectroscopy methods. It is shown that, after a number of adsorption cycles of Gd and oxygen atoms on the Si(100)-2×1 surface at room temperature and the annealing of the obtained structure at 600 °C, the work function decreases from 4.8 to less than 1 eV. The work function reduction at larger numbers of processing cycles is shown to be accompanied by the oxidation of Gd and Si atoms and a gradual decrease of the Si concentration in the near-surface region. The obtained results are explained by the formation of an O–Gd dipole layer on the surface.
Key words: adsorption, gadolinium, oxygen, Si(100)-2×1 surface, oxidation, work function, dipole layer.