0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Smirnov A.B., Korchovyi A.A., Krolevec N.M., Morozhenko V.A., Savkina R.K., Udovytska R.S., Sizov F.F.
V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Nauky Ave., Kyiv 03028, Ukraine; e-mail: email@example.com)
Study of the Morphology of p-CdHgTe Layers Structured by Grazing Silver-Ion Beam Irradiation
Original Author's Text: Ukrainian/English
Abstract: The “top–down” process of deposition of nanostructured layers on the surface of semiconductor materials by the ion implantation is studied. The irradiation of p-CdxHg1-xTe (x = 0.223)/CdZnTe heterostructures with 100-keV silver ions induces the formation of a nanostructure array on the specimen surface. The reduction of the ion beam incidence angle to 40˚ stimulates an ordering of nanostructures. The stabilization of the implantation-activated state of the system gives rise to the formation of the multifunctional metal oxide–semiconductor system Ag2O–p-CdxHg1-xTe (x = 0.2). The latter is a size-dependent response to the grazing beam irradiation and allows the combination of the functional properties of Ag2O oxide (Eg = 1.41 eV) and CdHgTe semiconductor (Eg = 0.123 eV) to be used as a basis for the creation of optical transducers and microwave grid arrays.
Key words: mnanostructured layer, CdHgTe semiconductor, method of ion implantation.