• Українська
  • English

< | >

Ukr. J. Phys. 2015, Vol. 60, N 10, p.1036-1041
doi:10.15407/ujpe60.10.1036    Paper

Litovchenko V.G.

V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Nauky Ave., Kyiv 03028, Ukraine; e-mail: lvg@isp.kiev.ua)

Photovoltage Spectroscopy Research of Solar Silicon Recombination Parameters

Section: Solid matter
Original Author's Text: Ukrainian

Abstract: Fundamental recombination parameters of a photosensitive solar silicon material have been studied using the surface photovoltage spectroscopy. The method proposed is analyzed on the basis of photosensitive silicon structures of four types: industrial photosensitive Si wafers with the chemically etched (real) surface, structures with the implanted recombination-active Fe+ impurity, SiO2–Si structures with the surface-induced inversion channel, and structures with the diffused pn junction. A comparison with the formulas obtained for the spectra of direct, VSC, and inverse, 1/VSC, photovoltages in terms of the absorption coefficient k and its reciprocal quantity 1/k is carried out. The surface and bulk recombination rates and the distributions of recombination-active impurities, structural technological impurities, and defects in the near-surface charge region of solar silicon are calculated.

Key words: surface photovoltage spectroscopy, solar silicon, near-surface charge region.