0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Luniov S.V., Burban O.V., Nazarchuk P.F.
Calculation of the Ground-State Ionization Energy for Shallow Donors in n-Ge Single Crystals within the ∆1-Model for the Conduction Band
Section: Solid Matter
Original Author's Text: Ukrainian
Abstract: On the basis of the Ritz variational method, the ionization energies for the ground states of Sb, P, and As donors in n-Ge single crystals are calculated in the framework of the ∆1-model for the conduction band and taking the dispersion law anisotropy and the chemical shift into account. A comparison of theoretical results with corresponding experimental data shows that the model of impurity’s Coulomb potential can be used as a rough approximation only for Sb impurities in Ge, making no allowance for the chemical shift. For the P and As impurities, when the potential field of an impurity ion is not Coulombic, the calculations have to be carried out with regard for a chemical shift.
Key words: Ritz variational method, chemical shift, ∆1-minimum, anisotropy factor.