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Ukr. J. Phys. 2015, Vol. 60, N 10, p.1022-1026
doi:10.15407/ujpe60.10.1022    Paper

Luniov S.V., Burban O.V., Nazarchuk P.F.

Luts’k National Technical University
(75, L’vivs’ka Str., Luts’k 43018, Ukraine; e-mail: luniovser@mail.ru, sashaboorban@gmail.com)

Calculation of the Ground-State Ionization Energy for Shallow Donors in n-Ge Single Crystals within the 1-Model for the Conduction Band

Section: Solid Matter
Original Author's Text: Ukrainian

Abstract: On the basis of the Ritz variational method, the ionization energies for the ground states of Sb, P, and As donors in n-Ge single crystals are calculated in the framework of the ∆1-model for the conduction band and taking the dispersion law anisotropy and the chemical shift into account. A comparison of theoretical results with corresponding experimental data shows that the model of impurity’s Coulomb potential can be used as a rough approximation only for Sb impurities in Ge, making no allowance for the chemical shift. For the P and As impurities, when the potential field of an impurity ion is not Coulombic, the calculations have to be carried out with regard for a chemical shift.

Key words: Ritz variational method, chemical shift, ∆1-minimum, anisotropy factor.