• Українська
  • English

< | >

Current issue   Ukr. J. Phys. 2015, Vol. 59, N 9, p.884-887
https://doi.org/10.15407/ujpe59.09.0884    Paper

Bondar V.M., Pylypchuk A.S., Bondarenko V.V.

Institute of Physics, Nat. Acad. of Sci. of Ukraine
(46, Nauky Ave., Kyiv 03028, Ukraine)

Effect of Weak Magnetic Field on the Parameters of Terahertz Radiation Emitted by Hot Carriers in p-Ge

Section: Solid matter
Original Author's Text: Ukrainian

Abstract: Experimental results are reported on the influence of a weak magnetic field on the intensity and the polarization of a terahertz radiation (∼100 μm) emitted by hot carriers in p-Ge specimens with the (111) or (100) crystallographic direction at a temperature of 5 K and heating electric fields of 300–600 V/cm.

Key words: weak magnetic field, terahertz radiation, p-Ge.


  1. V.M. Bondar, P.M. Tomchuk, and G.A, Shepelskii, Phys. Status Solidi B 250, 344 (2013).
  2. H. Fritzsche and M. Cuevas, Phys. Rev. 119, 1238 (1960).
  3. W.W. Lee and R.J. Sladek, Phys. Rev. 158, 794 (1967).
  4. A.R. Gadzhiev and I.S. Shlimak, Fiz. Tekh. Poluprovodn. 6, 1582 (1972).
  5. J. Chroboczek, A. Klokocki, and K. Kopalko, Physica C 7, 3042 (1974).
  6. E.M. Conwell, High Field Transport in Semiconductors (Academic Press, New York, 1967).
  7. B.I. Shklovskii and A.L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984).