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Current issue   Ukr. J. Phys. 2015, Vol. 59, N 8, p.826-830
doi:10.15407/ujpe59.08.0826    Paper

Litovchenko V.G.

V.E. Lashkarev Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Nauka Ave., Kyiv 03680, Ukraine; e-mail: lvg@isp.kiev.ua)

My Scientific Contacts with V.E. Lashkarev

Section: Chronicle, bibliographic data, and personalia
Original Author's Text: Ukrainian

Abstract: V.E. Lashkarev (1903–1973) is the famous scientist of Ukraine in semiconductor physics and its applied problems. The main achievements were obtained in the pioneer researches of the surface by LEED (lowenergy electron diffraction) and the photoelectric properties of the bulk and the surface of semiconductors. The study of the thermoelectric effects on semiconductor surfaces led, in particular, to the worldlevel discovery: the first observation of a p − n junction produced on the base of the heterostructure Cu–Cu2O–CuO (published in Izv. Acad. Sci. USSR, 1941). Structures with p − n junctions are the base for the electron device industry till now.

Key words: p − n junction, Lashkarev, Academician