• Українська
  • English

< | >

Current issue   Ukr. J. Phys. 2015, Vol. 59, N 7, p.706-711
https://doi.org/10.15407/ujpe59.07.0706    Paper

Freik D.M.1, Mudryi S.I.2, Gorichok I.V.1, Dzumedzey R.O.1, Krynytskyi O.S.3,1, Lyuba T.S.1

1 Physico-Chemical Institute, V. Stefanyk Prycarpathian National University
(57, Shevchenko Str., Ivano-Frankivsk 76018, Ukraine; e-mail: fcss@pu.if.ua)
2 Ivan Franko National University of L’viv
(8, Kyrylo i Mefodiy Str., Lviv 79005, Ukraine)
3 Ivano-Frankivsk National Technical University of Oil and Gas
(15, Karpatska Str., Ivano-Frankivsk 76001, Ukraine)

Charge Carrier Scattering Mechanisms in Thermoelectric PbTe:Sb

Section: Solid matter
Original Author's Text: Ukrainian

Abstract: On the basis of the results of radiographic researches and measurements of thermoelectric parameters of antimony-doped lead telluride, such as the thermoelectric coefficient and the conductivity, the penetration mechanisms of impurity atoms into the crystal lattice of the matrix are established. The influence of impurity on the charge carrier mobility is revealed. The introduction of impurities up to 0.3 at.% is shown to favor the electron mobility owing to the filling of tellurium vacancies, which are active scattering centers, by antimony ions, the effect of which on the electron mobility is lower.

Key words: lead telluride, doping, scattering mechanisms.


  1. L.I. Anatychuk, Thermoelements and Thermoelectric Devices (Naukova Dumka, Kyiv, 1979) (in Russian).
  2. L.I. Anatychuk, Thermoelectricity. V. 1: Physics of Thermoelectricity (Institute of Thermoelectricity, Chernivtsi, 1998).
  3. Ye.P. Sabo, Termoelektryka 4, 49 (2007).
  4. D.M. Freik, I.V. Gorichok, R.O. Dzumedzei et al., Fiz. Khim. Tverd. Tila 13, 220 (2012).
  5. D.M. Freik, R.O. Dzumedzei, I.V. Gorichok et al., Fiz. Khim. Tverd. Tila 14, 390 (2013).
  6. L.D. Borisova, Phys. Status Solidi A 53, K19 (1979).
  7. Chr. Jaworski, J. Tobola, E.M. Levin et al., Phys. Rev. B 80, 125208 (2009).
  8. D.M. Freik, C.A. Kryskov, I.V. Horichok et al., J. Thermoelectr. 2, 42 (2013).
  9. Y.I. Ravich, B.A. Efimova, and I.A. Smirnov, Semiconducting Lead Chalcogenides (Plenum Press, New York, 1970).
  10. V.F. Masterov, F.S. Nasredinov, S.A. Nemov et al., Fiz. Tekh. Poluprovodn. 34, 1321 (1997).
  11. S.A. Nemov, P.P. Seregin, S.M. Irkaev, and N.P. Seregin, Fiz. Tekh. Poluprovodn. 37, 279 (2003).
  12. G.A. Bordovskii, S.A. Nemov, and A.V. Marchenko, Fiz. Tekh. Poluprovodn. 45, 437 (2011).
  13. D.M. Freik, V.V. Prokopiv, M.O. Galushchak, M.V. Pyts, and G.D. Mateik, Crystal Chemistry and Thermodynamics of Atomic Defects in 4 6 Compounds (Plai, IvanoFrankivsk,1999) (in Ukrainian).
  14. B. Boltaks, Diffusion and Point Defects in Semiconductors (Mir, Moscow, 1987).
  15. B.M. Askerov, Electron Transport Phenomena in Semiconductors (World Scientific, Singapore, 1994).
  16. D.M. Zayachuk, Fiz. Tekh. Poluprovodn. 31, 217 (1997).
  17. Yu.I. Ravich and L.Ya. Morgovskii, Fiz. Tekh. Poluprovodn. 2, 1528 (1969).
  18. W. Zawadzki and W. Szymanska, Phys. Status Solidi B 45, 415 (1971).