0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Freik D.M.1, Mudryi S.I.2, Gorichok I.V.1, Dzumedzey R.O.1, Krynytskyi O.S.3,1, Lyuba T.S.1
1 Physico-Chemical Institute, V. Stefanyk Prycarpathian National University
(57, Shevchenko Str., Ivano-Frankivsk 76018, Ukraine; e-mail: firstname.lastname@example.org)
2 Ivan Franko National University of L’viv
(8, Kyrylo i Mefodiy Str., Lviv 79005, Ukraine)
3 Ivano-Frankivsk National Technical University of Oil and Gas
(15, Karpatska Str., Ivano-Frankivsk 76001, Ukraine)
Charge Carrier Scattering Mechanisms in Thermoelectric PbTe:Sb
Section: Solid matter
Original Author's Text: Ukrainian
Abstract: On the basis of the results of radiographic researches and measurements of thermoelectric parameters of antimony-doped lead telluride, such as the thermoelectric coefficient and the conductivity, the penetration mechanisms of impurity atoms into the crystal lattice of the matrix are established. The influence of impurity on the charge carrier mobility is revealed. The introduction of impurities up to 0.3 at.% is shown to favor the electron mobility owing to the filling of tellurium vacancies, which are active scattering centers, by antimony ions, the effect of which on the electron mobility is lower.
Key words: lead telluride, doping, scattering mechanisms.