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Current issue   Ukr. J. Phys. 2014, Vol. 59, N 6, p.622-627
doi:10.15407/ujpe59.06.0622    Paper

Kurchak A.I., Strikha M.V.

V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Prosp. Nauky, Kyiv 03680, Ukraine; e-mail: maksym_strikha@hotmail.com)

Conductivity of Graphene on Ferroelectric PVDF-TrFE

Section: Solid matter
Original Author's Text: Ukrainian

Abstract: The theory of conductivity in graphene grown by the chemical vapor deposition on a poly[(vinylidenefluoride-co-trifluoroethylene] (PVDF-TrFE) ferroelectric film has been developed with regard for the charge carrier scattering at large-scale potential nonuniformities created by both the domain structure of the ferroelectric and a nonuniform distribution of chemical dopants over the graphene surface. As the correlation length of nonuniformities increases, the graphene resistivity has been shown to decrease, and, in the case of a sufficiently uniform distribution of chemical dopants and the sufficiently large domain sizes, to achieve values of 100 Ω and less. Such values make the “graphene on PVDF-TrFE” system competitive with standard conductive and transparent indium tin oxide coverings for photovoltaics. The theoretical results have been compared with experimental data.

Key words: conductivity of graphene, PVDF-TrFE ferroelectric film, chemical vapor deposition.