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Current issue   Ukr. J. Phys. 2014, Vol. 59, N 6, p.612-621
doi:10.15407/ujpe59.06.0612    Paper

Galiy P.V.1, Losovyj Ya.B.2, Nenchuk T.M.1, Yarovets’ I.R.1

1 Ivan Franko National University of Lviv, Faculty of Electronics, Department for Semiconductors Physics
(50, Dragomanov Str., Lviv 79005, Ukraine; e-mail: galiy@electronics.lnu.edu.ua)
2 Nanoscale Characterization Facility, Department of Chemistry, Indiana University
(800, E. Kirkwood Ave., Bloomington, IN 47405, USA)

Low-Energy-Electron-Diffraction Structural Studies of (100) Cleavage Surfaces of In4Se3 Layered Crystals

Section: Solid matter
Original Author's Text: Ukrainian

Abstract: Structure stability and “thermal” parameters of (100) cleavage surfaces of In4Se3 crystals have been studied using the low energy electron diffraction method. The structure of (100) cleavage surfaces of In4Se3 crystals is shown to be stable and not subjected to any reconstruction in a wide temperature interval of 77–295 K. The Debye temperature and the Debye–Waller factor of studied surfaces were calculated on the basis of experimental data obtained for the temperature dependence of the intensities of diffraction spots (the intensities decreased, as the temperature grew). It is confirmed that the Debye temperatures for the cleavage surface (100) and in the bulk of In4Se3 crystal are different. The anisotropy of thermal expansion along the main crystallographic lattice directions in the cleavage plane (100) of In4Se3 is established

Key words: low energy electron diffraction, layered crystals, interlayer cleavage surfaces, Debye temperature, Debye–Waller factor, anisotropy of thermal expansion.