0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Current issue Ukr. J. Phys. 2014, Vol. 59, N 2, p.148-154
Grynchuk A.A., Koval I.P., Nakhodkin M.G.
Taras Shevchenko National University of Kyiv
(64, Volodymyrs’ka Str., Kyiv 01601, Ukraine; e-mail: firstname.lastname@example.org)
Surface Stresses at the Initial Steps of the GexSi1-x/Si(001) Surface Oxidation
Section: Solid matter
Original Author's Text: Ukrainian
Abstract: Elastic stresses arising at the clean GexSi1-x/Si(001) surface, as well as at the initial stages of its oxidation, are considered qualitatively by analyzing the changes of unit cell dimensions occurring owing to the ad-dimer formation or the atomic or molecular adsorption on the unit cell surfaces. The stress character is found to be almost identical for the clean GexSi1-x/Si(001) surface and the GexSi1-x/Si(001) surface with adsorbed oxygen molecules or one to three adsorbed oxygen atoms. In addition, the surface stresses revealed a significant anisotropy: they turned out compressive along the dimer rows and three times as large as tensile stresses in the perpendicular direction (along the interdimer bonds).
Key words: stress, stress anisotropy, oxidation.