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Current issue   Ukr. J. Phys. 2014, Vol. 59, N 2, p.148-154


Grynchuk A.A., Koval I.P., Nakhodkin M.G.

Taras Shevchenko National University of Kyiv
(64, Volodymyrs’ka Str., Kyiv 01601, Ukraine; e-mail: greenchuckaa@gmail.com)

Surface Stresses at the Initial Steps of the GexSi1-x/Si(001) Surface Oxidation

Section: Solid matter
Original Author's Text: Ukrainian

Abstract: Elastic stresses arising at the clean GexSi1-x/Si(001) surface, as well as at the initial stages of its oxidation, are considered qualitatively by analyzing the changes of unit cell dimensions occurring owing to the ad-dimer formation or the atomic or molecular adsorption on the unit cell surfaces. The stress character is found to be almost identical for the clean GexSi1-x/Si(001) surface and the GexSi1-x/Si(001) surface with adsorbed oxygen molecules or one to three adsorbed oxygen atoms. In addition, the surface stresses revealed a significant anisotropy: they turned out compressive along the dimer rows and three times as large as tensile stresses in the perpendicular direction (along the interdimer bonds).

Key words: stress, stress anisotropy, oxidation.