0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Klyui N.I.1, Liptuga A.I.1, Lozinskii V.B.1, Oksanich A.P.2, Pritchin S.E.2, Fomovskii F.V.2, Yukhymchuk V.O.1
1 V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Nauky Ave., Kyiv 03028, Ukraine; e-mail: email@example.com)
2 M. Ostrogradskyi National University of Kremenchuk
(20, Pershotravneva Str., Kremenchuk 39600, Ukraine)
Tellurium Effect on Degradation Stability of Semiinsulating Gallium Arsenide Crystals
Section: Solid matter
Original Author's Text: Ukrainian
Abstract: Initial untreated crystals of semiinsulating tellurium-compensated GaAs are shown to degrade considerably less after HF treatments in comparison with the corresponding specimens doped with chrome, which testifies to a substantial influence of the compensating impurity type on the substance degradation stability. Semiinsulating tellurium-compensated GaAs crystals preliminary treated in hydrogen plasma are also found to have higher degradation stability with respect to the action of long-term high-frequency and microwave treatments in comparison with raw crystals.
Key words: degradation stability of crystals, Czochralski technique, internal mechanical stresses.