0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Institute of Semiconductor Physics
(41, Nauky Prosp., Kyiv 03028, Ukraine)
Spectrum and Optical Contrastivity of an Oxidized Comb-Like Silicon Photonic Crystal
Section: Optics, lasers, and quantum electronics
Original Author's Text: English
Abstract: A typical oxidized ternary photonic crystal – A/B/A/C N-periodic structure – is investigated analytically and numerically in the framework of the transfer matrix formalism. The influence of the oxidation on photonic gaps and the positions of perfect reflection areas for (SiO2/Si/SiO2/Air)N structure is calculated with regard for a transformation of the widths of silicon oxide layers. It is shown that the intrinsic optical contrastivity has a non-monotone behavior during the process of oxidation of silicon in the case of p-polarized electromagnetic waves. The found results will allow one to determine the optimal regimes of oxidation to obtain the needed optical properties of a photonic material.
Key words: photonic bandgap materials, photonic resonators, trapped modes, oxidation, reflection, transmission.