• Українська
  • English

< | >

Current issue   Ukr. J. Phys. 2014, Vol. 58, N 8, p.769-772
https://doi.org/10.15407/ujpe58.08.0769    Paper

Rudenko R.M.1, Voitovych V.V.2, Kras’ko M.M.2, Kolosyuk A.G.2, Kraichynskyi A.M.2, Yukhymchuk V.O.3, Makara V.A.1

1 Taras Shevchenko National University of Kyiv, Faculty of Physics
(2, Academician Glushkov Ave., Kyiv 03680, Ukraine; e-mail: rudenko.romann@gmail.com)
2 Institute of Physics, Nat. Acad. of Sci. of Ukraine
(46, Nauky Ave., Kyiv 03680, Ukraine)
3 V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(45, Nauky Ave., Kyiv 03028, Ukraine)

Influence of High Temperature Annealing on the Structure and the Intrinsic Absorption Edge of Thin-Film Silicon Doped with Tin

Section: Solid matter
Original Author's Text: Ukrainian

Abstract: Influence of isochronal annealing in the range of 350–1100 ?C on the structural properties and the intrinsic absorption edge in thin silicon films doped with tin (a-SiSn) has been studied. It is found that as-deposited a-SiSn films with a tin content of about 4 at.%, unlike undoped a-Si ones, contain silicon nanocrystals with a crystallite size of about 4 nm and a crystalline fraction of about 65%. It is shown that, in the course of isochronal annealing of a-SiSn specimens in the interval of 350–1100 ?C, the size of silicon nanocrystals in the amorphous matrix gradually increases to about 7 nm, and the fraction of crystalline phase to about 100%. Crystallization in undoped a-Si is observed only after the annealing at temperatures above 700 ?C. The influence of tin on the optical band gap in a-Si as a function of the isochronal annealing temperature is analyzed.

Key words: thin-film silicon, doping with tin, crystallization, optical band gap, isochronal annealing.


  1. V.P. Afanasiev, A.S. Gudovskikh, A.Z. Kazak-Kazakevich, A.P. Sazanov, I.N. Trapeznikova, and E.I. Terukov, Semiconductors 38, 221 (2004).
  2. A.V. Shah, H. Schade, M. Vanecek, J. Meier, E. VallatSauvain, N. Wyrsch, U. Kroll, C. Droz, and J. Bailat, Prog. Photovolt. Res. Appl. 12, No. 23, 113 (2004).
  3. M. Vergant, G. Marchal, and M. Piecuch, Rev. Phys. Appl. 22, 1803 (1987).
  4. M. Jeon, H. Uchiyama, and K. Kamisako, Mater. Lett. 63, 246 (2009).
  5. R.S. Wagner and W.C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
  6. J.A. Schmidt, N. Budini, P. Rinaldi, R.D. Arce, and R.H. Buitrago, J. Phys. Conf. Ser. 167, ID 012046 (2009).
  7. V.V. Voitovych, V.B. Neimash, N.N. Krasko, A.G. Kolosiuk, V.Y. Povarchuk, R.M. Rudenko, V.A. Makara, R.V. Petrunya, V.O. Juhimchuk, and V.V. Strelchuk, Semiconductors 45, 1281 (2011).
  8. A.V. Vasin, A.V. Rusavsky, V.S. Lysenko, A.N. Nazarov, V.I. Kushnirenko, S.P. Starik, and V.G. Stepanov, Semiconductors 39, 572 (2005).
  9. P. Mishra and K.P. Jain, Phys. Rev. B. 64, 073304 (2001).
  10. H. Campbell and P.M. Fauchet, Solid State Commun. 58, 739 (1986).
  11. S.V. Gajsler, O.I. Semenova, R.G. Sharafutdinov, and B.A. Kolesov, Phys. Solid State 46, 1528 (2004).
  12. J. Tauc, R. Grigorovici, and A. Vancu, Phys. Status Solidi 15, 627 (1966).
  13. G.D. Cody, T. Tiedje, B. Abeles, T.D. Moustakas, B. Brooks, and Y. Goldstein, J. Phys. (Paris) 42 (C4), 301 (1981).
  14. G.P. Kuz'min, M.E. Karasev, E.M. Khokhlov, N.N. Kononov, S.B. Korovin, V.G. Plotnichenko, S.N. Polyakov, V.I. Pustovoy, and O.V. Tikhonevitch, Laser Physics 10, 939 (2000).
  15. S. Roorda, S. Doorn, W.C. Sinke, P.M.L.O. Scholte, and E. van Loenen, Phys. Rev. Lett. 62, 1880 (1989).
  16. Y.M. Niquet, C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B 62, 5109 (2000).