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Current issue   Ukr. J. Phys. 2014, Vol. 58, N 8, p.780-786

    Paper

Kuryliuk V.V.

Taras Shevchenko National University of Kyiv, Faculty of Physics
(64/13, Volodymyrs’ka Str., Kyiv 01601, Ukraine; e-mail: kuryluk@univ.kiev.ua)

Elastic Strains in SiGe Heterostructures with Non-Uniform Quantum Dots

Section: Nanosystems
Original Author's Text: Ukrainian

Abstract: Elastic strain distributions in SiGe heterostructures with quantum dots have been simulated with the use of the finite element method. The effect of a non-uniform germanium distribution in the nanoislands on the spatial dependence and the magnitude of elastic fields was studied. It is shown that quantum dots with a uniform component content are more strained in comparison with non-uniform nanoislands.

Key words: Stranski–Krastanov growth mode, Green’s functions, finite element method, wetting layer, stress tensor, elastic moduli tensor, rigid boundary conditions, node, Galerkin method.