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Current issue   Ukr. J. Phys. 2014, Vol. 58, N 8, p.773-779

    Paper

Pagava T.A., Beridze M.G., Maisuradze N.I., Chkhartishvili L.S., Kalandadze I.G.

Georgian Technical University
(77, Kostava Prosp., Tbilisi 0175, Georgia; e-mail: tpagava@gtu.ge)

Hall-Effect Study of Disordered Regions in Proton-Irradiated n-Si Crystals

Section: Solid matter
Original Author's Text: Ukrainian

Abstract: The nature and dimensions of disordered regions emerged in n-Si single crystals irradiated with
high-energy (25 MeV) protons have been studied by carrying out Hall measurements of their
electrophysical parameters. Specimens fabricated with the use of the zone-melting technique
and doped with phosphorus to a concentration of 6?1013 cm?3 are investigated. Irradiation
was carried out at room temperature to exposure doses of (1.8?8.1)?1012 cm?2. Depending on
the irradiation dose and the temperature of isochronous annealing, some specimens irradiated
with high-energy protons revealed a drastic increase of the effective Hall mobility µeff , which is
explained by the emergence of “metallic” inclusions in them, i.e. regions with the conductivity
considerably higher in comparison with that of the semiconductor matrix. The radius of those
regions was estimated to be Rm inclusions are nano-sized atomic clusters.

Key words: disordered regions, proton irradiation, effective Hall mobility, silicon.