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Current issue   Ukr. J. Phys. 2014, Vol. 58, N 5, p.472-479


Kurchak A.I.1, Morozovska A.N.2, Strikha M.V.1

1 V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Prosp. Nauky, Kyiv 03028, Ukraine; e-mail: maksym_strikha@hotmail.com)
2 Institute of Physics, Nat. Acad. of Sci. of Ukraine
(46, Prosp. Nauky, Kyiv 03028, Ukraine)

Rival Mechanisms of Hysteresis in the Resistivity of Graphene Channel

Section: Solid matter
Original Author's Text: Ukrainian

Abstract: A model for rival mechanisms of hysteresis that appears in the dependence of the resistivity of graphene channels created on substrates of various nature on the gate voltage has been developed. Two types of hysteresis were distinguished: direct (associated with the presence of adsorbates with dipole moments on the surface and the interface) and inverse (associated with the capture of charge carriers from the graphene layer by the localized states at the interface graphene–substrate). A capability of discerning between those channels by varying the rate of gate voltage sween was discussed. A good agreement is obtained between our theoretical predictions and the experimental data available in the literature.

Key words: graphene, mechanisms of hysteresis, adsorbates, surface dipoles.