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Current issue   Ukr. J. Phys. 2014, Vol. 58, N 3, p.260-267


Litovchenko N.M., Korbutyak D.V., Strilchuk O.M.

V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Prosp. Nauky, Kyiv 03028, Ukraine; e-mail: strilchuk@isp.kiev.ua)

Excitonic Parameters of InxGa1-xAs-GaAs Heterostructures with Quantum Wells at Low Temperatures.

Section: Nanosystems
Original Author's Text: Ukrainian

Abstract: Characteristics of GaAs/InxGa1−xAs/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence (PL) spectra and their corresponding theoretical analysis. The experimentally obtained temperature dependences of the energy position of the PL band maximum, hνmax, band half-width, W0, and intensity, I, are examined. The values of energy of local phonons, Eph, exciton binding energy, Eex, and the Huang–Rhys factor, N, are determined. A comparison between the values obtained for those quantities and the growth parameters of considered specimens allowed us to assert that the highest-quality specimens are those that are characterized by low N values and one-mode phonon spectra.

Key words: photoluminescence, quantum well, exciton, phonon.