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Current issue   Ukr. J. Phys. 2014, Vol. 58, N 3, p.243-248
https://doi.org/10.15407/ujpe58.03.0243    Paper

Kras’ko M.M.

Institute of Physics, Nat. Acad. Sci. of Ukraine
(46, Nauky Ave., Kyiv 03680, Ukraine; e-mail: krasko@iop.kiev.ua)

Influence of Tin Impurity on Degradation of Conductivity in Electron-Irradiated n-Si

Section: Solid matter
Original Author's Text: Ukrainian

Abstract: The influence of an isovalent tin impurity on the electron concentration in Cz n-Si irradiated with 1-MeV electrons has been studied both experimentally and theoretically. It is found that the Sn impurity leads to the acceleration of the conductivity degradation in electron-irradiated nSi. The effect is more pronounced in high-resistance samples, whereas the rates of electron removal from low-resistance ones are almost identical in both materials. This fact can be explained by the difference between the formation efficiency of main compensating radiationinduced defects in n-Si doped with Sn (SnV and VP complexes) and undoped n-Si (mainly, VP complexes), which depends of the concentration of phosphorus in the samples.

Key words: silicon, electron irradiation, tin-vacancy complex.

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