0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Current issue Ukr. J. Phys. 2014, Vol. 58, N 3, p.243-248
Institute of Physics, Nat. Acad. Sci. of Ukraine
(46, Nauky Ave., Kyiv 03680, Ukraine; e-mail: email@example.com)
Influence of Tin Impurity on Degradation of Conductivity in Electron-Irradiated n-Si
Section: Solid matter
Original Author's Text: Ukrainian
Abstract: The influence of an isovalent tin impurity on the electron concentration in Cz n-Si irradiated with 1-MeV electrons has been studied both experimentally and theoretically. It is found that the Sn impurity leads to the acceleration of the conductivity degradation in electron-irradiated nSi. The effect is more pronounced in high-resistance samples, whereas the rates of electron removal from low-resistance ones are almost identical in both materials. This fact can be explained by the difference between the formation efficiency of main compensating radiationinduced defects in n-Si doped with Sn (SnV and VP complexes) and undoped n-Si (mainly, VP complexes), which depends of the concentration of phosphorus in the samples.
Key words: silicon, electron irradiation, tin-vacancy complex.