0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Current issue Ukr. J. Phys. 2014, Vol. 58, N 2, p.142-150
Sachenko A.V.1, Kostylev V.P.1, Litovchenko V.G.1, Popov V.G.1, Romanyuk B.M.1, Chernenko V.V.1, Naseka V.M.1, Slusar T.V.2, Kyrylova S.I.1, Komarov F.F.3
1 V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Nauky Ave., Kyiv 03028, Ukraine; e-mail: firstname.lastname@example.org)
2 National Aviation University
(1, Cosmonaut Komarov Ave., Kyiv 03058, Ukraine)
3 A.N. Sevchenko Institute for Applied Physical Problems, Belarusian State University
(7, Kurchatov Str., Minsk 220108, Belarus; e-mail: email@example.com)
Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer
Section: Solid matter
Original Author's Text: Ukrainian
Abstract: Spectral dependences of the small-signal surface photovoltage, Vf (λ), with a region of shortwave recession have been studied experimentally and theoretically. The dependences Vf (λ) are shown to enable important information concerning a modification of surface and bulk recombination properties of the photosensitive silicon material in the short-wave spectral range to be obtained experimentally with the use of a nondestructive technique. In particular, the formation of a damaged near-surface layer owing to the Fe implantation is found to bring about a significant decrease in the diffusion length (i.e. the lifetime) in the implanted layer and an increase of the effective surface recombination rate on the illuminated surface.
Key words: surface photovoltage, surface recombination, silicon.