• Українська
  • English

< | >

Current issue   Ukr. J. Phys. 2014, Vol. 58, N 2, p.142-150
https://doi.org/10.15407/ujpe58.02.0142    Paper

Sachenko A.V.1, Kostylev V.P.1, Litovchenko V.G.1, Popov V.G.1, Romanyuk B.M.1, Chernenko V.V.1, Naseka V.M.1, Slusar T.V.2, Kyrylova S.I.1, Komarov F.F.3

1 V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Nauky Ave., Kyiv 03028, Ukraine; e-mail: vglytovchenko@gmail.com)
2 National Aviation University
(1, Cosmonaut Komarov Ave., Kyiv 03058, Ukraine)
3 A.N. Sevchenko Institute for Applied Physical Problems, Belarusian State University
(7, Kurchatov Str., Minsk 220108, Belarus; e-mail: kff@tut.by)

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

Section: Solid matter
Original Author's Text: Ukrainian

Abstract: Spectral dependences of the small-signal surface photovoltage, Vf (λ), with a region of shortwave recession have been studied experimentally and theoretically. The dependences Vf (λ) are shown to enable important information concerning a modification of surface and bulk recombination properties of the photosensitive silicon material in the short-wave spectral range to be obtained experimentally with the use of a nondestructive technique. In particular, the formation of a damaged near-surface layer owing to the Fe implantation is found to bring about a significant decrease in the diffusion length (i.e. the lifetime) in the implanted layer and an increase of the effective surface recombination rate on the illuminated surface.

Key words: surface photovoltage, surface recombination, silicon.

References:

  1. W. Gartner, Phys. Rev. 105, 823 (1997). https://doi.org/10.1103/PhysRev.105.823
  2. V.A. Zuev and V.G. Litovchenko, Phys. Status Solidi A 16, 175 (1966). https://doi.org/10.1002/pssb.19660160242
  3. V.A. Zuev and V.G. Litovchenko, Surf. Sci. 32, 365 (1972). https://doi.org/10.1016/0039-6028(72)90166-5
  4. L. Kronik and Y. Shapira, Surf. Sci. Rep. 37, 1 (1999). https://doi.org/10.1016/S0167-5729(99)00002-3
  5. A.P. Gorban', V.P. Kostylyov, V.G. Litovchenko, A.V. Sachenko, and O.V. Snitko, Ukr. Fiz. Zh. 34, 404 (1989).
  6. A.P. Gorban', V.P. Kostylyov, A.V. Sachenko, A.A. Serba, and V.V. Chernenko, Optoelektron. Poluprovodn. Tekhn. 37, 61 (2002).
  7. A.P. Gorban', V.P. Kostylyov, A.V. Sachenko, O.A. Serba, I.O. Sokolovskyi, and V.V. Chernenko, Ukr. Fiz. Zh. 55, 784 (2010).
  8. V.V. Antoshchuk, V.V. Milenin, V.E. Primachenko, and O.V. Snitko, Fiz. Tekh. Poluprovodn. 11, 2002 (1977).
  9. V.G. Litovchenko and A.P. Gorban', Fundamentals of Microelectronic Metal–Insulator–Semiconductor Systems (Naukova Dumka, Kyiv, 1978) (in Russian).
  10. ???
  11. ???
  12. K.D. Glinchuk and N.M. Litovchenko, Poluprovodn. Tekhn. Mikroelektron. 28, 4 (1978).
  13. V.G. Litovchenko, V.M. Naseka, and A.A. Evtukh, Ukr. J. Phys. 57, 73 (2012).