• Українська
  • English

< | >

Current issue   Ukr. J. Phys. 2014, Vol. 58, N 2, p.126-134
doi:10.15407/ujpe58.02.0126    Paper

Olikh O.Ya.

Taras Shevchenko National University of Kyiv, Faculty of Physics
(64, Volodymyrs’ka Str., Kyiv 01601, Ukraine; e-mail: olikh@univ.kiev.ua)

Features of Charge Transport in Mo/n-Si Structures with a Schottky Barrier

Section: Solid matter
Original Author's Text: Ukrainian

Abstract: Forward and reverse current-voltage characteristics of Mo/n-Si Schottky barrier structures have been studied experimentally in the temperature range 130 ÷ 330 K. The Schottky barrier height is found to increase and the ideality factor to decrease, as the temperature grows. The obtained results are analyzed in the framework of a non-uniform contact model. The average value and the standard deviation of a Schottky barrier height are determined to be 0.872 and 0.099 V, respectively, at T = 130 ÷ 220 K and 0.656 and 0.036 V, respectively, at T = 230 ÷ 330 K. Thermionic emission over the non-uniform barrier and tunneling are shown to be the dominant processes of charge transfer at a reverse bias voltage.

Key words: inhomogeneous Schottky barrier, thermionic emission, silicon.