0372-400Х (Edition in Ukrainian)
2071-0186 (Edition in English)
2071-0194 (in electronic form)
Abbreviated key title: Ukr. J. Phys.
Najafov B.A.1, Dadashova V.V.2
1 Institute of Radiation Problems, Azerbaijan National Academy of Sciences
(9, Vakhabzade Str., AZ1143 Baku, Azerbaijan; e-mail: firstname.lastname@example.org, email@example.com)
2 Baku State University
(23, Z/Khalilov Str., AZ1143 Baku, Azerbaijan)
Optoelectronic Properties of Hydrogenated Amorphous Silicon–Carbon and Nanocrystalline-Silicon Thin Films
Section: Solid matter
Original Author's Text: Ukrainian
Abstract: Some parameters of thin films fabricated of hydrogenated amorphous silicon–carbon alloys aSi1?xCx:H with x = 0 and 0.5 and nanocrystalline silicon (nc-Si) and serving as a basis for developing solar cells including a Schottky barrier and p–i–n and double p–i–n heterojunctions have been considered. In double p–i–n heterojunctions, a-SiC/a-Si/nc-Si, the p-layer was made from a-SiC:H and used as a “window”, and the n-layer was made from nc-Si. The currentvoltage characteristics of solar cells of each type at their illumination are studied. The highest efficiency of 11.5% was found for solar cells with the double p–i–n heterojunctions in the case where a cell 1 cm2 in area was illuminated with light of a 100-mW/cm2 intensity.
Key words: films of a hydrogenated amorphous silicon–carbon alloy, films of nanocrystalline silicon, plasma-chemical technique, crystallites, efficiency of solar cells.