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Current issue   Ukr. J. Phys. 2014, Vol. 58, N 1, p.20-25


Kadan V.M.1, Indutnyi I.Z.2, Dan’ko V.A.2, Shepelyavyi P.E.2, Dmitruk I.M.3, Korenyuk P.I.1, Blonsky I.V.1

1 Institute of Physics, Nat. Acad. of Sci. of Ukraine
(46, Prosp. Nauky, Kyiv 03680, Ukraine; e-mail: kadan@iop.kiev.ua, blon@iop.kiev.ua)
2 V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
(41, Prosp. Nauky, Kyiv 03680, Ukraine)
3 Taras Shevchenko National University of Kyiv
(2, Academician Glushkov Ave., Kyiv 03127, Ukraine)

Influence of Trap States on the Kinetics of Luminescence and Induced Light Absorption by Si Nanoparticles in a SiO2 Matrix at Their Excitation with Femtosecond Laser Pulses

Section: Optics, lasers, and quantum electronics
Original Author's Text: Ukrainian

Abstract: We report on the results of our researches dealing with nonlinearities caused by trap states in the lux-intensity characteristics of the intrinsic emission band of Si nanoparticles embedded into a SiO2 matrix and the dependence of the temporal characteristics of induced absorption on the pump femtosecond pulse fluence.

Key words: trap states, transient absorption, lux-intensive characteristics, fluence, effect of luminescence fatigue, CCD-camera, Auger-process, pump-probe, white supercontinuum, telegraph-like signal.